报告题目（会议名称）: 2007 International Workshop on Electron Devices and Semiconductor Technology (IEDST 2007)

报告人: Prof. I. Adesida等

报告时间: 2007年6月4日全天

报告地点: 中央主楼后厅

主办单位: 杏耀娱乐（微电子所）

会议主席: 任天令 教授

08:30 Openings

08:40 Morning Session

08:40 Advances in Processes and Device Technologies for AlGaN/GaN High Electron Mobility Transistors

I. Adesida, University of Illinois, Urbana-Champaign

09:05 Processing and Defect Control in Advanced Ge Technologies

C. Claeys, IMEC & Katholieke Universiteit Leuven

09:30 CMOS Fabricated by Hybrid-Orientation Technology (HOT)

Bin (Frank) Yang, Advanced Micro Devices

09:55 A New and Highly Manufacturable Strain Technique for PMOS Device Performance Enhancement with Gate Length 35-nm and below

Qiuxia Xu, Institute of Microelectronics, Chinese Academy of Science

10:20 Break

10:40 Recent Advances in Photonic Devices for RF/Wireless Communication Applications

Paul K. L. Yu, University of California, San Diego

11:05 Threshold-Voltage Modeling of Bulk FinFETs by Considering Charge-Sharing and Surface Potential

Jong-Ho Lee, Kyungpook National University

11:30 Modeling and Design of Beyond the Roadmap Materials and Devices: Nanowires, Nanotubes, and Molecules

Roger Lake, University of California, Riverside

11:55 Lunch

13:20 Poster Sessions

14:20 Afternoon Session

14:20 Unified Compact Modeling of Emerging Multiple-Gate MOSFETs

Xing Zhou, Nanyang Technological University

14:45 Modeling the Gate Tunneling Current Effects of Sub-100nm NMOS Devices with an Ultra-thin (1nm) Gate Oxide

James B. Kuo, National Taiwan University

15:10 Robust ESD Protection Solutions in CMOS/BiCMOS Technologies

Juin J. Liou, University of Central Florida

15:35 Break

15:55 The Incremental Frequency Charge Pumping Method: Extending the CMOS Ultra-Thin Gate Oxide Measurement to below 1nm

Steve S. Chung, National Chiao Tung University

16:20 Physics of High-Frequency Noise in Insulated Gate Field-Effect Transistors

R. P. Jindal, University of Louisiana, Lafayette

16:45 Future of Nano CMOS Technology

Hiroshi Iwai, Tokyo Institute of Technology

17:10 Closing